Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 234
... material erosion from the cathode has been the subject of some controversy . Crater formation , associated with the ... material by thermoelastic stresses [ 85 ] ; ( 3 ) Expulsion of material by the local electric field ; and ( 4 ) ...
... material erosion from the cathode has been the subject of some controversy . Crater formation , associated with the ... material by thermoelastic stresses [ 85 ] ; ( 3 ) Expulsion of material by the local electric field ; and ( 4 ) ...
Page 415
... material is of both fundamental and practical interest . The formation of a long - range order can influence the optical and electrical properties of the material . The In Ga1 - P system is used as a short - wavelength optical emitting ...
... material is of both fundamental and practical interest . The formation of a long - range order can influence the optical and electrical properties of the material . The In Ga1 - P system is used as a short - wavelength optical emitting ...
Page 766
John L. Vossen, Werner Kern. Ideally , a mask material should etch at a significantly lower rate than the target material . Photoresist , however , etches at rates comparable with many target materials , so that deep etches require thick ...
John L. Vossen, Werner Kern. Ideally , a mask material should etch at a significantly lower rate than the target material . Photoresist , however , etches at rates comparable with many target materials , so that deep etches require thick ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength