Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 48
... Measured Ē × B drift current for the circular planar magnetron as a function of net discharge current ( from Ref . 15 ) . much more in the range of Bohm diffusion than classical transport . Thus , turbulence and collective effects and ...
... Measured Ē × B drift current for the circular planar magnetron as a function of net discharge current ( from Ref . 15 ) . much more in the range of Bohm diffusion than classical transport . Thus , turbulence and collective effects and ...
Page 62
... measured by microwave interferometer technique near the ECR region in an ASTEX ECR source [ 29 ] . neutral populations within the source . Unlike the other types of plasma devices discussed earlier ( magnetron , rf and dc diode ) , the ...
... measured by microwave interferometer technique near the ECR region in an ASTEX ECR source [ 29 ] . neutral populations within the source . Unlike the other types of plasma devices discussed earlier ( magnetron , rf and dc diode ) , the ...
Page 72
John L. Vossen, Werner Kern. IX . MEASUREMENTS IN PLASMAS During the normal operation of a plasma , there are usually a few parameters , such as the voltage , the applied power , or the discharge current , that can be directly measured ...
John L. Vossen, Werner Kern. IX . MEASUREMENTS IN PLASMAS During the normal operation of a plasma , there are usually a few parameters , such as the voltage , the applied power , or the discharge current , that can be directly measured ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength