Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 35
... method developed in this category is the famous SPH [LIU 03, LIU 10, LUC 77, RAN 96]. This method was originally developed to model astrophysical phenomena, and later it has been ... Method to be Coupled with the Discrete Element Method 35.
... method developed in this category is the famous SPH [LIU 03, LIU 10, LUC 77, RAN 96]. This method was originally developed to model astrophysical phenomena, and later it has been ... Method to be Coupled with the Discrete Element Method 35.
Page 115
... method , and so remarkable is the method that , by a single word , the poet can present a scene to the mind which would take other persons many lines to effect or a painter much time to represent . There is method in pulpit oratory . An ...
... method , and so remarkable is the method that , by a single word , the poet can present a scene to the mind which would take other persons many lines to effect or a painter much time to represent . There is method in pulpit oratory . An ...
Page 268
... method to solid mechanics, Computer Physics Communications 87 (1–2) (1995) 236–252. [68] Z. Chen, R. Brannon, An evaluation of the material point method, Tech. Rep. SAND 2002-0482, Sandia National Laboratories, Albuquerque, NM, 2002 ...
... method to solid mechanics, Computer Physics Communications 87 (1–2) (1995) 236–252. [68] Z. Chen, R. Brannon, An evaluation of the material point method, Tech. Rep. SAND 2002-0482, Sandia National Laboratories, Albuquerque, NM, 2002 ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength