Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 462
... molecular species in an adlayer is much more conducive to depositing patterned films . Because of the proximity of a surface , the optical and chemical properties of adsorbed layers of polyatomic molecules can differ considerably from ...
... molecular species in an adlayer is much more conducive to depositing patterned films . Because of the proximity of a surface , the optical and chemical properties of adsorbed layers of polyatomic molecules can differ considerably from ...
Page 597
... molecules already containing Si - O - Si or Si - OH bonds that formed by homogeneous gas phase reactions . There is in fact no experimental evidence from MS studies that would support the formation of gaseous molecular species with any ...
... molecules already containing Si - O - Si or Si - OH bonds that formed by homogeneous gas phase reactions . There is in fact no experimental evidence from MS studies that would support the formation of gaseous molecular species with any ...
Page 682
... molecules . At low kinetic energy ( below ionization or dissociation energy ) , these collisions are elastic . Since elec- trons are so much lighter than the gas molecules , the energy loss in an elastic collision will be minimal ( on ...
... molecules . At low kinetic energy ( below ionization or dissociation energy ) , these collisions are elastic . Since elec- trons are so much lighter than the gas molecules , the energy loss in an elastic collision will be minimal ( on ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength