Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 227
... observed the expansion of a ring of spots on a circular cathode with the arc struck initially at the center . It was ... observed . The relationship between arc velocity and self - generated magnetic fields observed by Sher- man et al ...
... observed the expansion of a ring of spots on a circular cathode with the arc struck initially at the center . It was ... observed . The relationship between arc velocity and self - generated magnetic fields observed by Sher- man et al ...
Page 241
... observed in the cathode jet , and they presented further analysis of the problem . Miller [ 108 ] investigated ion energies and compared his observations with the predictions of the potential hump and gas dynamic theories . The arc ...
... observed in the cathode jet , and they presented further analysis of the problem . Miller [ 108 ] investigated ion energies and compared his observations with the predictions of the potential hump and gas dynamic theories . The arc ...
Page 824
... observed in high - power thermal etching of Mo films on glass substrates [ 148 ] . This has been attributed to relaxation of internal stresses resulting from differences in the thermal expansion of the film and the substrate . At ...
... observed in high - power thermal etching of Mo films on glass substrates [ 148 ] . This has been attributed to relaxation of internal stresses resulting from differences in the thermal expansion of the film and the substrate . At ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength