Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 319
... obtained in forced convection flow LPCVD reactors [ 272 ] , whereas conventional tubular LPCVD systems yield typical ... obtained if deposition is conducted within a unique reaction window of 2-12 torr pressure at 100-330 ° C ...
... obtained in forced convection flow LPCVD reactors [ 272 ] , whereas conventional tubular LPCVD systems yield typical ... obtained if deposition is conducted within a unique reaction window of 2-12 torr pressure at 100-330 ° C ...
Page 475
... obtained films with smoother morphology on GaAs . Thin In films have also been deposited by dissociatively photoionizing InI at 193 nm to yield In * -I pairs [ 37 ] . For an InI number density of 1015 cm3 , deposition rates were ~ 400 Å ...
... obtained films with smoother morphology on GaAs . Thin In films have also been deposited by dissociatively photoionizing InI at 193 nm to yield In * -I pairs [ 37 ] . For an InI number density of 1015 cm3 , deposition rates were ~ 400 Å ...
Page 557
... obtained with these films , after annealing , was about 40 μΩ - cm . 3. Tantalum Silicide Tantalum silicide films have been deposited by reacting tantalum penta- chloride ( TaCl5 ) and SiH2Cl2 in a hydrogen ambient [ 170 ] . The films ...
... obtained with these films , after annealing , was about 40 μΩ - cm . 3. Tantalum Silicide Tantalum silicide films have been deposited by reacting tantalum penta- chloride ( TaCl5 ) and SiH2Cl2 in a hydrogen ambient [ 170 ] . The films ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength