Thin Film Processes, Volume 2 |
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Page 83
This occurs at low partial pressures of the depositing specie and residual gas in
the system and is responsible for the line - of - sight feature typical of
evaporationdeposition processes and low - pressure magnetron type sputtered
deposition ...
This occurs at low partial pressures of the depositing specie and residual gas in
the system and is responsible for the line - of - sight feature typical of
evaporationdeposition processes and low - pressure magnetron type sputtered
deposition ...
Page 726
Self - bias voltage decreases rapidly with increasing magnetic field , but the etch
rate of Si in a CF4 plasma occurs at intermediate magnetic field strength at a bias
voltage between 25 and 50 V . This corresponds to conditions that maximize ...
Self - bias voltage decreases rapidly with increasing magnetic field , but the etch
rate of Si in a CF4 plasma occurs at intermediate magnetic field strength at a bias
voltage between 25 and 50 V . This corresponds to conditions that maximize ...
Page 826
The first occurs at fluences where only part of the irradiated surface melts . The
first few pulses produce random local melting that roughens the surface . This
roughened surface induces subsequent periodicity by preferential scattering (
161 ...
The first occurs at fluences where only part of the irradiated surface melts . The
first few pulses produce random local melting that roughens the surface . This
roughened surface induces subsequent periodicity by preferential scattering (
161 ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls