Thin Film Processes, Volume 2 |
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Page 71
The second reason for using this technique is to lower the operating pressure of
the chamber . The hollow cathode ... The additional supply of electrons from the
hollow cathode removes this limitation and allows operation at 0 . 1 mtorr for the ...
The second reason for using this technique is to lower the operating pressure of
the chamber . The hollow cathode ... The additional supply of electrons from the
hollow cathode removes this limitation and allows operation at 0 . 1 mtorr for the ...
Page 141
Finally , the electron beam evaporators are harder to control than the resistively
heated effusion cell , so some kind of monitoring and feedback would be required
for stable operation . Electron bombardment sources do generate broader beam
...
Finally , the electron beam evaporators are harder to control than the resistively
heated effusion cell , so some kind of monitoring and feedback would be required
for stable operation . Electron bombardment sources do generate broader beam
...
Page 142
For lower - temperature operation , the material standard can be relaxed
somewhat ; graphite and quartz crucibles can be used in those applications .
Source crucibles range in size from 2 cc to about 60 cc ; sizes up to 300 cc are
used for ...
For lower - temperature operation , the material standard can be relaxed
somewhat ; graphite and quartz crucibles can be used in those applications .
Source crucibles range in size from 2 cc to about 60 cc ; sizes up to 300 cc are
used for ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
20 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 20 Sep 2010 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |