Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 151
... Optical Pyrometer . A new in - situ growth rate monitoring technique has been developed [ 38 ] . Using an optical pyrometer with a narrow - band ( 0.94 ± 0.03 μm ) response , apparent temperature oscillations during the growth of GaAs ...
... Optical Pyrometer . A new in - situ growth rate monitoring technique has been developed [ 38 ] . Using an optical pyrometer with a narrow - band ( 0.94 ± 0.03 μm ) response , apparent temperature oscillations during the growth of GaAs ...
Page 449
... optical source . In parallel geometry , the optical beam does not impinge on the substrate , but rather produces atomic or molecular species that migrate to the substrate and react with the surface and adlayer , resulting in the desired ...
... optical source . In parallel geometry , the optical beam does not impinge on the substrate , but rather produces atomic or molecular species that migrate to the substrate and react with the surface and adlayer , resulting in the desired ...
Page 800
... optical limit . The optical limit on resolution for different image - formation techniques has already been discussed in Section III . Other purely optical effects , such as wavelength , spatial , and temporal coherence , will be ...
... optical limit . The optical limit on resolution for different image - formation techniques has already been discussed in Section III . Other purely optical effects , such as wavelength , spatial , and temporal coherence , will be ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength