Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 67
Page 262
... oxide forms on the target surface ; because of the higher electron emission coefficient of the oxide , the arc spot prefers to reside on an oxide surface . Where the oxide is present only as a thin film , it is rapidly consumed by the ...
... oxide forms on the target surface ; because of the higher electron emission coefficient of the oxide , the arc spot prefers to reside on an oxide surface . Where the oxide is present only as a thin film , it is rapidly consumed by the ...
Page 506
John L. Vossen, Werner Kern. TABLE I SELECTED SOL - GEL OXIDE FILMS Substrate Optimized property Composition Single oxide SiO2 acrylic graphite Al2O3 metal TiO2 glass Double oxide SiO2 - B203 glass scuff resistance oxidation barrier ...
John L. Vossen, Werner Kern. TABLE I SELECTED SOL - GEL OXIDE FILMS Substrate Optimized property Composition Single oxide SiO2 acrylic graphite Al2O3 metal TiO2 glass Double oxide SiO2 - B203 glass scuff resistance oxidation barrier ...
Page 516
... oxide or arsenic oxide . In addition to bonding to glass and ceramic substrates , many of the sol - gel solutions adhere to metal [ 54 ] , silicon carbide [ 55 ] , and carbon or graphite [ 56 ] . These coatings are used to prevent ...
... oxide or arsenic oxide . In addition to bonding to glass and ceramic substrates , many of the sol - gel solutions adhere to metal [ 54 ] , silicon carbide [ 55 ] , and carbon or graphite [ 56 ] . These coatings are used to prevent ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength