Thin Film Processes, Volume 2 |
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Page 262
A thin film of oxide forms on the target surface ; because of the higher electron
emission coefficient of the oxide , the arc spot prefers to reside on an oxide
surface . Where the oxide is present only as a thin film , it is rapidly consumed by
the arc ...
A thin film of oxide forms on the target surface ; because of the higher electron
emission coefficient of the oxide , the arc spot prefers to reside on an oxide
surface . Where the oxide is present only as a thin film , it is rapidly consumed by
the arc ...
Page 506
TABLE I SELECTED SOL - GEL OXIDE FILMS Composition Substrate Optimized
property Single oxide SiO2 acrylic graphite metal glass Al2O3 scuff resistance
oxidation barrier erosion protection selective reflection multilayer mirror TiO2
glass ...
TABLE I SELECTED SOL - GEL OXIDE FILMS Composition Substrate Optimized
property Single oxide SiO2 acrylic graphite metal glass Al2O3 scuff resistance
oxidation barrier erosion protection selective reflection multilayer mirror TiO2
glass ...
Page 516
Using x - ray photoelectron spectroscopy ( XPS ) , it was found that the layer was
titania with trace gallium oxide or arsenic oxide . In addition to bonding to glass
and ceramic substrates , many of the sol - gel solutions adhere to metal ( 54 ) ...
Using x - ray photoelectron spectroscopy ( XPS ) , it was found that the layer was
titania with trace gallium oxide or arsenic oxide . In addition to bonding to glass
and ceramic substrates , many of the sol - gel solutions adhere to metal ( 54 ) ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls