Thin film processes IIThis sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Key Features * Provides an all-new sequel to the 1978 classic, Thin Film Processes * Introduces new topics, and several key topics presented in the original volume are updated * Emphasizes practical applications of major thin film deposition and etching processes * Helps readers find the appropriate technology for a particular application |
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Page 262
TABLE XIV "Reprinted with permission from Elsevier Sequoia S. A., P. C.
Johnson and H. Rand- hawa, Surface and Coating Technology 33, 53-62 (1987).
the formation of insulating oxides on the surface of sputter targets operating in dc
...
TABLE XIV "Reprinted with permission from Elsevier Sequoia S. A., P. C.
Johnson and H. Rand- hawa, Surface and Coating Technology 33, 53-62 (1987).
the formation of insulating oxides on the surface of sputter targets operating in dc
...
Page 506
TABLE I Selected Sol-Gel Oxide Films Composition Substrate Optimized property
Single oxide SiO2 Al2O3 TiO2 Double oxide SiO2-B2O3 SiO2-Al2O3 (mullite)
SiO2-TiO2 SiO2-ZrO2 (zircon) In2O3-6% SnO2 Triple oxide Al2O3-ZrO2-SiO2 ...
TABLE I Selected Sol-Gel Oxide Films Composition Substrate Optimized property
Single oxide SiO2 Al2O3 TiO2 Double oxide SiO2-B2O3 SiO2-Al2O3 (mullite)
SiO2-TiO2 SiO2-ZrO2 (zircon) In2O3-6% SnO2 Triple oxide Al2O3-ZrO2-SiO2 ...
Page 516
Using x-ray photoelectron spectroscopy (XPS), it was found that the layer was
titania with trace gallium oxide or arsenic oxide. In addition to bonding to glass
and ceramic substrates, many of the sol-gel solutions adhere to metal [54], silicon
...
Using x-ray photoelectron spectroscopy (XPS), it was found that the layer was
titania with trace gallium oxide or arsenic oxide. In addition to bonding to glass
and ceramic substrates, many of the sol-gel solutions adhere to metal [54], silicon
...
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactive reactor refractory metal region remote PECVD RHEED semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric structure substrate substrate temperature susceptor target techniques Technol thermal thickness thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength
Bibliographic information
| Title | Thin film processes II Volume 2 of Thin Film Processes, John L. Vossen |
| Authors | John L. Vossen, Werner Kern |
| Editors | John L. Vossen, Werner Kern |
| Edition | illustrated |
| Publisher | Academic Press, 1991 |
| Original from | the University of Michigan |
| Digitized | 20 Sep 2010 |
| ISBN | 0127282513, 9780127282510 |
| Length | 866 pages |
| Subjects | › › Technology & Engineering / Electronics / Semiconductors Technology & Engineering / Material Science Thin films |
| Export Citation | BiBTeX EndNote RefMan |