Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 71
Page 39
... particle , v is the velocity , and B is the magnetic field . For a charged particle moving at right angles to a magnetic field , this force will cause the particle to move in an orbital path . The orbit can be found by equating the ...
... particle , v is the velocity , and B is the magnetic field . For a charged particle moving at right angles to a magnetic field , this force will cause the particle to move in an orbital path . The orbit can be found by equating the ...
Page 40
... particle undergoing orbital motion in a magnetic field , the radius will increase while the rotational frequency remains constant , and the particle will undergo a spiral motion . The ability to couple energy into charged particles ...
... particle undergoing orbital motion in a magnetic field , the radius will increase while the rotational frequency remains constant , and the particle will undergo a spiral motion . The ability to couple energy into charged particles ...
Page 303
... particle seeding technique is lim- ited by the thermophoretic transport of smoke particles away from the hot susceptor towards the less hot reactor walls . This transport mechanism leads to significant deviations between particle ...
... particle seeding technique is lim- ited by the thermophoretic transport of smoke particles away from the hot susceptor towards the less hot reactor walls . This transport mechanism leads to significant deviations between particle ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength