Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 443
John L. Vossen, Werner Kern. II . Fundamental Aspects of Photochemical Vapor Deposition A. Photothermal and Photochemical Processes III . Reactors , Optical Sources , and Associated Equipment C. Column IVA , VIA , and VIIA Transition ...
John L. Vossen, Werner Kern. II . Fundamental Aspects of Photochemical Vapor Deposition A. Photothermal and Photochemical Processes III . Reactors , Optical Sources , and Associated Equipment C. Column IVA , VIA , and VIIA Transition ...
Page 445
... photochemical or thermal in nature , that are now accessible with optical radiation . Laser - assisted doping , for exam- ple , is only briefly ... PHOTOCHEMICAL VAPOR DEPOSITION 445 Fundamental Aspects of Photochemical Vapor Deposition.
... photochemical or thermal in nature , that are now accessible with optical radiation . Laser - assisted doping , for exam- ple , is only briefly ... PHOTOCHEMICAL VAPOR DEPOSITION 445 Fundamental Aspects of Photochemical Vapor Deposition.
Page 462
... Photochemical interactions in adlayers of molecules at a surface under- lie many photochemical deposition processes and are particularly useful in those applications for which spatial resolution is an important consider- ation . In the ...
... Photochemical interactions in adlayers of molecules at a surface under- lie many photochemical deposition processes and are particularly useful in those applications for which spatial resolution is an important consider- ation . In the ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength