Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 444
... photodeposition of films often permits operation at lower temper- atures , where impurity redistribution and thermally induced mechanical stress are minimized . Other attractive aspects of photo - CVD include the capability for ...
... photodeposition of films often permits operation at lower temper- atures , where impurity redistribution and thermally induced mechanical stress are minimized . Other attractive aspects of photo - CVD include the capability for ...
Page 476
... PHOTODEPOSITED WITH A KRF Laser ( 248 nm ) from Metal HexacarbONYL PRECURSOrs ( after Ref . 49 ) Deposition rate ( Å ... photodeposition of molybdenum , but the results are comparable to those obtained for Cr and W. Gilgen et al . [ 52 ] ...
... PHOTODEPOSITED WITH A KRF Laser ( 248 nm ) from Metal HexacarbONYL PRECURSOrs ( after Ref . 49 ) Deposition rate ( Å ... photodeposition of molybdenum , but the results are comparable to those obtained for Cr and W. Gilgen et al . [ 52 ] ...
Page 485
... photodeposition studies reported to date have relied upon the alkyls as sources for one or both of the Column IIB and VIA atoms . The first photodeposited epitaxial II - VI film , HgTe , was grown by Irvine and co - workers [ 94 ] from ...
... photodeposition studies reported to date have relied upon the alkyls as sources for one or both of the Column IIB and VIA atoms . The first photodeposited epitaxial II - VI film , HgTe , was grown by Irvine and co - workers [ 94 ] from ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength