Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 764
... photoresist pattern . The portion of the photoresist that is at the optimum angle for etching will grow at the expense of other portions resulting in the formation of a facet ( Fig . 3 ) . If this facet is permitted to grow to a large ...
... photoresist pattern . The portion of the photoresist that is at the optimum angle for etching will grow at the expense of other portions resulting in the formation of a facet ( Fig . 3 ) . If this facet is permitted to grow to a large ...
Page 765
... photoresist masks is to have walls with a positive slope ( Fig . 4a ) , rather than vertical or undercut walls . A ... photoresist is common for IBE masks . There are many types of photoresist , with AZ 1350H and Kodak 5214 among the ...
... photoresist masks is to have walls with a positive slope ( Fig . 4a ) , rather than vertical or undercut walls . A ... photoresist is common for IBE masks . There are many types of photoresist , with AZ 1350H and Kodak 5214 among the ...
Page 766
... Photoresist , however , etches at rates comparable with many target materials , so that deep etches require thick masks - usually of a thickness comparable to the etch depth . Ion bombardment usually results in some degree of damage to ...
... Photoresist , however , etches at rates comparable with many target materials , so that deep etches require thick masks - usually of a thickness comparable to the etch depth . Ion bombardment usually results in some degree of damage to ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength