Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 12
... plasmas . In general , plasma - based processes differ from other techniques , such as evaporation , molecular beam epitaxy ( MBE ) , and chemical vapor deposition ( CVD ) , in that the plasma process is not thermal , and the dynamics ...
... plasmas . In general , plasma - based processes differ from other techniques , such as evaporation , molecular beam epitaxy ( MBE ) , and chemical vapor deposition ( CVD ) , in that the plasma process is not thermal , and the dynamics ...
Page 15
... plasma with respect to the chamber , will be on the order of several volts more positive than the chamber potential . This result is found in all processing plasmas : The plasma potential , on the average , is a minimum of several volts ...
... plasma with respect to the chamber , will be on the order of several volts more positive than the chamber potential . This result is found in all processing plasmas : The plasma potential , on the average , is a minimum of several volts ...
Page 37
... plasma processes in which a sample would be placed directly in the plasma , perhaps even on one of the electrodes ... PLASMAS AND SOURCES FOR ETCHING AND DEPOSITION 37 Afterglow Plasmas Afterglow Plasmas.
... plasma processes in which a sample would be placed directly in the plasma , perhaps even on one of the electrodes ... PLASMAS AND SOURCES FOR ETCHING AND DEPOSITION 37 Afterglow Plasmas Afterglow Plasmas.
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength