Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 673
... Plasma - Solid Interface ( Heterogeneous Gas - Solid Reactions ) 687 IV . The Extensive Parameter Space of Plasma - Assisted Etching 694 A. General Considerations 694 B. Consequences 695 C. Process Optimization 705 V. Plasma Etching ...
... Plasma - Solid Interface ( Heterogeneous Gas - Solid Reactions ) 687 IV . The Extensive Parameter Space of Plasma - Assisted Etching 694 A. General Considerations 694 B. Consequences 695 C. Process Optimization 705 V. Plasma Etching ...
Page 738
... plasma - assisted etching always require very good control of etch selectivity and etch profile . Therefore , it is mandatory to monitor carefully how the etching process proceeds , and in particular , when it has reached its end point ...
... plasma - assisted etching always require very good control of etch selectivity and etch profile . Therefore , it is mandatory to monitor carefully how the etching process proceeds , and in particular , when it has reached its end point ...
Page 742
... etch processes , which is reflected in the large business volume : The sale of systems for plasma - assisted etching in 1988 amounted to $ 475 million ! This great success in the commercial field is clearly due to two factors : first ...
... etch processes , which is reflected in the large business volume : The sale of systems for plasma - assisted etching in 1988 amounted to $ 475 million ! This great success in the commercial field is clearly due to two factors : first ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength