Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 509
... polymers , and higher - water solutions produce crosslinked polymers or branched clusters . A small volume fraction of branched clusters will re- strict flow when the same volume fraction of linear polymers will not . At a higher volume ...
... polymers , and higher - water solutions produce crosslinked polymers or branched clusters . A small volume fraction of branched clusters will re- strict flow when the same volume fraction of linear polymers will not . At a higher volume ...
Page 795
... polymer from the substrate , leads to increased tapering of the sidewall [ 57 ] . The minimum number of pulses required to remove all polymer from a substrate is determined by the fluence at the diffraction minima in Fig . 5 [ 57 ] ...
... polymer from the substrate , leads to increased tapering of the sidewall [ 57 ] . The minimum number of pulses required to remove all polymer from a substrate is determined by the fluence at the diffraction minima in Fig . 5 [ 57 ] ...
Page 824
... polymers almost always leave debris on the surface around the etched feature . In the single - shot removal of metal films ... polymer film [ 155 ] and either par- ticulates or ablation debris [ 155 , 156 ] can produce conical structures ...
... polymers almost always leave debris on the surface around the etched feature . In the single - shot removal of metal films ... polymer film [ 155 ] and either par- ticulates or ablation debris [ 155 , 156 ] can produce conical structures ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength