Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 27
... positive surface exposed to the plasma . This was , as we found earlier , a result of the higher mobility of the ... positive than whichever electrode is powered positively at any given time . This is shown in Fig . 10 . For the ...
... positive surface exposed to the plasma . This was , as we found earlier , a result of the higher mobility of the ... positive than whichever electrode is powered positively at any given time . This is shown in Fig . 10 . For the ...
Page 181
... positive ion bombardment . Since the plasma is always the most positive part of the glow discharge , the self - bias voltage on a floating substrate is approximately equal to the energy of the bombarding , positive ions ( usually 10–30 ...
... positive ion bombardment . Since the plasma is always the most positive part of the glow discharge , the self - bias voltage on a floating substrate is approximately equal to the energy of the bombarding , positive ions ( usually 10–30 ...
Page 765
... positive slope ( Fig . 4a ) , rather than vertical or undercut walls . A positive slope will result in the progressive enlarge- ment of the etched area during the etching ( Fig . 4b ) , even in the absence of faceting . Such enlargement ...
... positive slope ( Fig . 4a ) , rather than vertical or undercut walls . A positive slope will result in the progressive enlarge- ment of the etched area during the etching ( Fig . 4b ) , even in the absence of faceting . Such enlargement ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength