Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 119
... possible to deposit TiC at a high rate and at a relatively low substrate temperature . The plasma imparts sufficient energy to the reacting species to ovecome the activation energy barrier , and hence condition ( 3 ) , i.e. , the rate ...
... possible to deposit TiC at a high rate and at a relatively low substrate temperature . The plasma imparts sufficient energy to the reacting species to ovecome the activation energy barrier , and hence condition ( 3 ) , i.e. , the rate ...
Page 392
... possible , and to identify operating conditions leading to uniform growth and sharp transitions in composition between adjacent layers [ 148–153 ] . The reactor geometry has considerable impact on the fluid flow struc- ture . It is possible ...
... possible , and to identify operating conditions leading to uniform growth and sharp transitions in composition between adjacent layers [ 148–153 ] . The reactor geometry has considerable impact on the fluid flow struc- ture . It is possible ...
Page 516
... possible to make a cheaper window that showed the chemical durability of a more expensive window with the use of a small amount of materials . This points out one of the primary advantages of the sol - gel process in the formation of ...
... possible to make a cheaper window that showed the chemical durability of a more expensive window with the use of a small amount of materials . This points out one of the primary advantages of the sol - gel process in the formation of ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength