Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 377
... precursor development , in particular in the development of alternative precursors to the highly toxic group V and VI hydrides - e.g . , AsH3 , PH3 , and H2Se . A number of reviews of precursor selection and reactions have appeared ...
... precursor development , in particular in the development of alternative precursors to the highly toxic group V and VI hydrides - e.g . , AsH3 , PH3 , and H2Se . A number of reviews of precursor selection and reactions have appeared ...
Page 460
... precursors for both elements A and B and is similar to photosensitized deposition in that generally only one of the two precur- sors absorbs strongly at the optical source wavelength . Upon absorbing a photon , this precursor is either ...
... precursors for both elements A and B and is similar to photosensitized deposition in that generally only one of the two precur- sors absorbs strongly at the optical source wavelength . Upon absorbing a photon , this precursor is either ...
Page 650
... precursor , secondary reactions of the products , and both gas - phase and surface reactions may be involved . For the sake of illustration , however , we will assume simple linear decomposition kinetics of a precursor , due to photon ...
... precursor , secondary reactions of the products , and both gas - phase and surface reactions may be involved . For the sake of illustration , however , we will assume simple linear decomposition kinetics of a precursor , due to photon ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength