Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 112
... present in the environment on the film , the surface mobility of the fragments ( which in turn depends on their kinetic energy and substrate temperature ) , the mean residence time of the fragments on the substrate , the reaction rate ...
... present in the environment on the film , the surface mobility of the fragments ( which in turn depends on their kinetic energy and substrate temperature ) , the mean residence time of the fragments on the substrate , the reaction rate ...
Page 755
... present , a broad ion beam usually has enough ions present that the mutual respulsion of positive ions would result in the ion beam spreading out in all directions . Assuming that the necessary electrons are initially present , they ...
... present , a broad ion beam usually has enough ions present that the mutual respulsion of positive ions would result in the ion beam spreading out in all directions . Assuming that the necessary electrons are initially present , they ...
Page 768
... present in the SiO2 will remove it . When the silicon is reached , there is no longer any oxygen present , and the deposition of a thin layer of carbon at the etch surface will greatly reduce the etch rate . If the etch rate is to be ...
... present in the SiO2 will remove it . When the silicon is reached , there is no longer any oxygen present , and the deposition of a thin layer of carbon at the etch surface will greatly reduce the etch rate . If the etch rate is to be ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength