Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 77
Page 305
... pressure reactors generic [ 215a ] Low - pressure SiH4 → poly - Si [ 179 ] horizontal multiple wafer - in - tube Low - pressure SiH2Cl2 + NH3 → Si3N4 [ 216 ] horizontal multiple wafer - in - tube Low - pressure , SiH4 → poly - Si ...
... pressure reactors generic [ 215a ] Low - pressure SiH4 → poly - Si [ 179 ] horizontal multiple wafer - in - tube Low - pressure SiH2Cl2 + NH3 → Si3N4 [ 216 ] horizontal multiple wafer - in - tube Low - pressure , SiH4 → poly - Si ...
Page 306
... pressure horizontal reactor Atmospheric and SiH4 → epi - Si [ 91,92 ] reduced pressure horizontal reactor Atmospheric and generic [ 186,209 ] reduced pressure horizontal reactor Atmospheric and Ga ( CH3 ) 3 + AsH3 · → GaAs [ 103 , 199 ] ...
... pressure horizontal reactor Atmospheric and SiH4 → epi - Si [ 91,92 ] reduced pressure horizontal reactor Atmospheric and generic [ 186,209 ] reduced pressure horizontal reactor Atmospheric and Ga ( CH3 ) 3 + AsH3 · → GaAs [ 103 , 199 ] ...
Page 374
... pressure and the total pressure over the source , respectively . The bubbler must be kept in a temperature - controlled bath , since the source partial pressure is determined by the source temperature alone . Several commercial constant ...
... pressure and the total pressure over the source , respectively . The bubbler must be kept in a temperature - controlled bath , since the source partial pressure is determined by the source temperature alone . Several commercial constant ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength