Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 213
... produce the levels of adhesion and film properties required . The depositing species , in both of the above cases , are neutral atoms , and there is little that can be done to increase their deposition energy . The properties and ...
... produce the levels of adhesion and film properties required . The depositing species , in both of the above cases , are neutral atoms , and there is little that can be done to increase their deposition energy . The properties and ...
Page 810
... produce uneven etch profiles ; this can be minimized by using a beam homogenizer to produce a more uniform intensity profile [ 73 , 74 ] . Thermal gradients in the reactant medium near the surface are some- times desirable to increase ...
... produce uneven etch profiles ; this can be minimized by using a beam homogenizer to produce a more uniform intensity profile [ 73 , 74 ] . Thermal gradients in the reactant medium near the surface are some- times desirable to increase ...
Page 823
... produce reactants by photolysis and substrate heating is minimal , no etching - induced damage is observed [ 140 ] . Melt - based processes produce fewer defects if lower ther- mal gradients and , therefore , lower recrystallization ...
... produce reactants by photolysis and substrate heating is minimal , no etching - induced damage is observed [ 140 ] . Melt - based processes produce fewer defects if lower ther- mal gradients and , therefore , lower recrystallization ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength