Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 80
... properties from engineering materials - e.g . , a combination of two or more of the follow- ing : high - temperature strength ; impact strength ; specific optical , electrical or magnetic properties ; wear resistance ; fabricability ...
... properties from engineering materials - e.g . , a combination of two or more of the follow- ing : high - temperature strength ; impact strength ; specific optical , electrical or magnetic properties ; wear resistance ; fabricability ...
Page 129
... PROPERTIES OF EVAPORATED FILMS Physical and chemical properties of films critically depend on structure / morphology , defects , impurity content in the film , etc. These are in turn governed by deposition variables in given process ...
... PROPERTIES OF EVAPORATED FILMS Physical and chemical properties of films critically depend on structure / morphology , defects , impurity content in the film , etc. These are in turn governed by deposition variables in given process ...
Page 614
... properties ; and ( 2 ) at temperatures higher than about 250 ° C , substrate / process interactions produce a suf- ficiently thick ( > 10 Å ) subcutaneous - grown oxide layer that degrades both interface and bulk electrical properties ...
... properties ; and ( 2 ) at temperatures higher than about 250 ° C , substrate / process interactions produce a suf- ficiently thick ( > 10 Å ) subcutaneous - grown oxide layer that degrades both interface and bulk electrical properties ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength