Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 83
Page 224
... range of parameters including the cathode material , the type of cathode spot , and the current growth rate . Mitterauer [ 40 ] found the current densities quoted by various authors to range between 10 A / cm2 and 107 A / cm2 . Two ...
... range of parameters including the cathode material , the type of cathode spot , and the current growth rate . Mitterauer [ 40 ] found the current densities quoted by various authors to range between 10 A / cm2 and 107 A / cm2 . Two ...
Page 265
... range of 100-1,300 Å / min with arc currents in the range 1-10 A. The saturation magnetization of the films , after anneal- ing in air at 600 ° C , was close to that of the bulk material . The authors subsequently reported on the ...
... range of 100-1,300 Å / min with arc currents in the range 1-10 A. The saturation magnetization of the films , after anneal- ing in air at 600 ° C , was close to that of the bulk material . The authors subsequently reported on the ...
Page 415
... range spontaneous ordering of the Al and Ga atoms in the crystal results in the formation of a natural monolayer superlattice . The degree of ordering with OMVPE Al Ga1 - As depends on growth temperature , substrate orientation , alloy ...
... range spontaneous ordering of the Al and Ga atoms in the crystal results in the formation of a natural monolayer superlattice . The degree of ordering with OMVPE Al Ga1 - As depends on growth temperature , substrate orientation , alloy ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength