Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 318
... ratio . This important ratio is temperature dependent and must be in- creased with increasing temperature for attainment of the deposition rate maximum . For APCVD in reactors where the gases are mixed within the reaction chamber , an ...
... ratio . This important ratio is temperature dependent and must be in- creased with increasing temperature for attainment of the deposition rate maximum . For APCVD in reactors where the gases are mixed within the reaction chamber , an ...
Page 319
... ratio of 1 : 1 [ 270 ] , and at 450 ° C at 1.45 : 1 ( p . 102 in Ref . 14 ) . Similar ratios have been reported for other types of LPCVD reactors [ 271 , 272 ] . The reactor design rather than differences in the pro- cess mechanism may ...
... ratio of 1 : 1 [ 270 ] , and at 450 ° C at 1.45 : 1 ( p . 102 in Ref . 14 ) . Similar ratios have been reported for other types of LPCVD reactors [ 271 , 272 ] . The reactor design rather than differences in the pro- cess mechanism may ...
Page 489
... ratio in [ Al , Ga ] As films , for example , was determined to be 20 for λ 193 nm , a laser fluence of 320 mJ - cm - 2 and a Ga / Al ratio in the gas phase of 17. At 248 nm , however , a Ga / Al ratio ( gas phase ) of 14 , and 100 mJ ...
... ratio in [ Al , Ga ] As films , for example , was determined to be 20 for λ 193 nm , a laser fluence of 320 mJ - cm - 2 and a Ga / Al ratio in the gas phase of 17. At 248 nm , however , a Ga / Al ratio ( gas phase ) of 14 , and 100 mJ ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength