Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 240
... reflection of accelerated ions at the cathode surface . Ions reflected from the cathode , according to this model , would have energies of eV , or 2eV , and , if more of these ions are reflected than are needed to neutralize the ...
... reflection of accelerated ions at the cathode surface . Ions reflected from the cathode , according to this model , would have energies of eV , or 2eV , and , if more of these ions are reflected than are needed to neutralize the ...
Page 662
... reflected in the final deposit geometry . Back reactions between product molecules and previously deposited or ... reflects the flux dis- tribution of the beam . Similar volcano - shaped deposits can be produced in ion - beam - induced ...
... reflected in the final deposit geometry . Back reactions between product molecules and previously deposited or ... reflects the flux dis- tribution of the beam . Similar volcano - shaped deposits can be produced in ion - beam - induced ...
Page 742
... reflected in the large business volume : The sale of systems for plasma - assisted etching in 1988 amounted to $ 475 million ! This great success in the commercial field is clearly due to two factors : first , an ever - improving ...
... reflected in the large business volume : The sale of systems for plasma - assisted etching in 1988 amounted to $ 475 million ! This great success in the commercial field is clearly due to two factors : first , an ever - improving ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength