Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 118
... reactant to the reaction interface ; ( 2 ) transport of reaction products away from the reaction interface ; ( 3 ) the ... reactants ; ( 2 ) adequate collision frequency ; ( 3 ) the rate of chemical reactions at the interface ; and ( 4 ) ...
... reactant to the reaction interface ; ( 2 ) transport of reaction products away from the reaction interface ; ( 3 ) the ... reactants ; ( 2 ) adequate collision frequency ; ( 3 ) the rate of chemical reactions at the interface ; and ( 4 ) ...
Page 541
... reactants at various ratios at 300 ° C ; the frequency of the parallel - plate reactor in this example was 13.56 MHz [ 109 ] . D. Silicate Glasses Phosphosilicate glass ( PSG ) and borophosphosilicate glass ( BPSG ) can be readily ...
... reactants at various ratios at 300 ° C ; the frequency of the parallel - plate reactor in this example was 13.56 MHz [ 109 ] . D. Silicate Glasses Phosphosilicate glass ( PSG ) and borophosphosilicate glass ( BPSG ) can be readily ...
Page 810
... reactants towards and / or of products away from the surface . As the spot size de- creases , a much higher flux of reactant molecules is possible before the reaction becomes diffusion limited , as illustrated in Fig . 14 [ 50 ] . When ...
... reactants towards and / or of products away from the surface . As the spot size de- creases , a much higher flux of reactant molecules is possible before the reaction becomes diffusion limited , as illustrated in Fig . 14 [ 50 ] . When ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength