Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 192
... reactive gas is present at the substrate to form the dielectric compound . t S Figure 4 is useful for a qualitative description of the two modes of reactive sputtering . Here , ✪ , and ✪ , are , respectively , the degree of target ...
... reactive gas is present at the substrate to form the dielectric compound . t S Figure 4 is useful for a qualitative description of the two modes of reactive sputtering . Here , ✪ , and ✪ , are , respectively , the degree of target ...
Page 194
... reactive gas combinations ; the main difference being whether the plasma impedance increases or decreases with the target transition [ 122 ] . 1. High - Rate Reactive Sputtering Numerous ... REACTIVE GAS 2 REACTIVE 194 ROBERT PARSONS.
... reactive gas combinations ; the main difference being whether the plasma impedance increases or decreases with the target transition [ 122 ] . 1. High - Rate Reactive Sputtering Numerous ... REACTIVE GAS 2 REACTIVE 194 ROBERT PARSONS.
Page 762
John L. Vossen, Werner Kern. B. Reactive Sputtering Some survey publications are available for reactive sputtering [ 16 , 17 ] , but the information included is less systematic and organized than the preceding information on physical ...
John L. Vossen, Werner Kern. B. Reactive Sputtering Some survey publications are available for reactive sputtering [ 16 , 17 ] , but the information included is less systematic and organized than the preceding information on physical ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength