Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 191
... rf power [ 110-112 ] , or by reactively sputtering a metal target , with either rf or dc power , in a mixture of an inert and a suitable reactive gas [ 6 ] . Both techniques are widely used ; however , reactive sputtering is usually the ...
... rf power [ 110-112 ] , or by reactively sputtering a metal target , with either rf or dc power , in a mixture of an inert and a suitable reactive gas [ 6 ] . Both techniques are widely used ; however , reactive sputtering is usually the ...
Page 193
... sputtering , the reactive gas flow is operated in the range from F1 + to F2 + . Under these operating conditions , a high deposition rate corresponding to the sputter yield for the metal surface is achieved , while nearly stoichiometric ...
... sputtering , the reactive gas flow is operated in the range from F1 + to F2 + . Under these operating conditions , a high deposition rate corresponding to the sputter yield for the metal surface is achieved , while nearly stoichiometric ...
Page 762
John L. Vossen, Werner Kern. B. Reactive Sputtering Some survey publications are available for reactive sputtering [ 16 , 17 ] , but the information included is less systematic and organized than the preceding information on physical ...
John L. Vossen, Werner Kern. B. Reactive Sputtering Some survey publications are available for reactive sputtering [ 16 , 17 ] , but the information included is less systematic and organized than the preceding information on physical ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength