Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 309
... reactor models . d . Other CVD Reactor Configurations In comparison to the classical CVD reactor configurations discussed in the preceding sections , relatively few modeling studies have been made of complex production systems , such as ...
... reactor models . d . Other CVD Reactor Configurations In comparison to the classical CVD reactor configurations discussed in the preceding sections , relatively few modeling studies have been made of complex production systems , such as ...
Page 375
... reactor within the gas manifold or near the reactor head . A run - vent configuration is often used at the reactor head to provide for the rapid change in the gas phase composition of the growth ambient . Typically , several such gas ...
... reactor within the gas manifold or near the reactor head . A run - vent configuration is often used at the reactor head to provide for the rapid change in the gas phase composition of the growth ambient . Typically , several such gas ...
Page 389
... Reactor Vertical reactor , ideal impinging jet and rotating disk configurations Vertical reactor with substrate rotation Vertical reactor with substrate rotation Horizontal reactor Horizontal reactor Horizontal reactor Horizontal ...
... Reactor Vertical reactor , ideal impinging jet and rotating disk configurations Vertical reactor with substrate rotation Vertical reactor with substrate rotation Horizontal reactor Horizontal reactor Horizontal reactor Horizontal ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength