Thin Film Processes, Volume 2 |
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Page 309
Other CVD Reactor Configurations In comparison to the classical CVD reactor
configurations discussed in the preceding sections , relatively few modeling
studies have been made of complex production systems , such as the barrel
reactor .
Other CVD Reactor Configurations In comparison to the classical CVD reactor
configurations discussed in the preceding sections , relatively few modeling
studies have been made of complex production systems , such as the barrel
reactor .
Page 375
ifold allows for the development of a steady - state flow of gas through the
bubbler to a vent line prior to its introduction into the feed flow to the reactor .
Carrier gas continues to flow through the organometallic sources throughout the
growth ...
ifold allows for the development of a steady - state flow of gas through the
bubbler to a vent line prior to its introduction into the feed flow to the reactor .
Carrier gas continues to flow through the organometallic sources throughout the
growth ...
Page 389
TABLE II REPRESENTATIVE EXAMPLES OF OMVPE REACTOR MODELS FOR
THE GROWTH OF GaAs FROM TMG AND AsHz . Reactor Model Ref . ( 117 , 119
] Vertical reactor , ideal impinging jet and rotating disk configurations Vertical ...
TABLE II REPRESENTATIVE EXAMPLES OF OMVPE REACTOR MODELS FOR
THE GROWTH OF GaAs FROM TMG AND AsHz . Reactor Model Ref . ( 117 , 119
] Vertical reactor , ideal impinging jet and rotating disk configurations Vertical ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
20 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 20 Sep 2010 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |