Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 220
... reduced the current per arc spot . The reduced ion flux was tenta- tively attributed to redeposition on the target as a result of increased gas scattering . D. Spot Size Two major methods have been employed to determine spot size . One ...
... reduced the current per arc spot . The reduced ion flux was tenta- tively attributed to redeposition on the target as a result of increased gas scattering . D. Spot Size Two major methods have been employed to determine spot size . One ...
Page 306
... reduced pressure horizontal reactor Atmospheric and SiH4 → epi - Si [ 91,92 ] reduced pressure horizontal reactor Atmospheric and generic [ 186,209 ] reduced pressure horizontal reactor Atmospheric and Ga ( CH3 ) 3 + AsH3 · → GaAs ...
... reduced pressure horizontal reactor Atmospheric and SiH4 → epi - Si [ 91,92 ] reduced pressure horizontal reactor Atmospheric and generic [ 186,209 ] reduced pressure horizontal reactor Atmospheric and Ga ( CH3 ) 3 + AsH3 · → GaAs ...
Page 335
... reduced - pressure reactors from chlorosilanes , SiH , Cl4 - x ( x = 0,1,2,4 ) [ 32 , 46 , 47 ] . The deposition temperature decreases with hydrogen content in the precursor , while the process becomes increasingly sensitive to oxidiz ...
... reduced - pressure reactors from chlorosilanes , SiH , Cl4 - x ( x = 0,1,2,4 ) [ 32 , 46 , 47 ] . The deposition temperature decreases with hydrogen content in the precursor , while the process becomes increasingly sensitive to oxidiz ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength