Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 255
... metal deposition . In the case of reacted coatings , some reaction may occur at the target surface , thus producing ... refractory metals for wear and decorative applications . A. Metal and Elemental Film Deposition At the time of ...
... metal deposition . In the case of reacted coatings , some reaction may occur at the target surface , thus producing ... refractory metals for wear and decorative applications . A. Metal and Elemental Film Deposition At the time of ...
Page 339
... metal silicides , certain optically transparent metal oxides , and some ... refractory elements and compounds have been produced by CVD processes for ... metal films have been published in a number of papers ( Chapter 4 in Ref . 4 ; pp ...
... metal silicides , certain optically transparent metal oxides , and some ... refractory elements and compounds have been produced by CVD processes for ... metal films have been published in a number of papers ( Chapter 4 in Ref . 4 ; pp ...
Page 556
... Refractory Metal Silicides While the high conductivities of refractory metals are desirable for gate and interconnection applications , these metals are chemically unstable in oxidizing ambients [ 161 ] and adhere poorly to SiO2 ...
... Refractory Metal Silicides While the high conductivities of refractory metals are desirable for gate and interconnection applications , these metals are chemically unstable in oxidizing ambients [ 161 ] and adhere poorly to SiO2 ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength