Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 24
Page viii
... Remote Plasma - Enhanced Chemical - Vapor Deposition Lucovsky , D. V. Tsu , R. A. Rudder , and R. J. Markunas I. Introduction 501 502 508 513 520 520 520 523 525 526 526 532 537 542 546 554 558 558 559 565 566 II . Plasma - Enhanced CVD ...
... Remote Plasma - Enhanced Chemical - Vapor Deposition Lucovsky , D. V. Tsu , R. A. Rudder , and R. J. Markunas I. Introduction 501 502 508 513 520 520 520 523 525 526 526 532 537 542 546 554 558 558 559 565 566 II . Plasma - Enhanced CVD ...
Page 566
... PECVD Thin Films A. Properties B. Device Applications VI . Summary and Conclusions Acknowledgments References 611 611 613 614 616 616 I. INTRODUCTION The formation of thin films by ... remote PECVD process for 566 G. LUCOVSKY et al .
... PECVD Thin Films A. Properties B. Device Applications VI . Summary and Conclusions Acknowledgments References 611 611 613 614 616 616 I. INTRODUCTION The formation of thin films by ... remote PECVD process for 566 G. LUCOVSKY et al .
Page 568
John L. Vossen, Werner Kern. The remote PECVD process was first used by Helix et al . in 1978 [ 7 ] in an attempt to define a new approach to surface capping for GaAs . In 1982 , Meiners [ 2 ] used a remote PECVD technique , designated ...
John L. Vossen, Werner Kern. The remote PECVD process was first used by Helix et al . in 1978 [ 7 ] in an attempt to define a new approach to surface capping for GaAs . In 1982 , Meiners [ 2 ] used a remote PECVD technique , designated ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength