Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 91
... Resistance heating together forming high resistance contact Cerium 785 1,305 Chromium 1,900 1,205 W , conical basket Electro - deposited Cr on W helical coil Sublimitation Cobalt 1,478 649 Cb , W Embedded Columbian 2,500 ( v.p. at ...
... Resistance heating together forming high resistance contact Cerium 785 1,305 Chromium 1,900 1,205 W , conical basket Electro - deposited Cr on W helical coil Sublimitation Cobalt 1,478 649 Cb , W Embedded Columbian 2,500 ( v.p. at ...
Page 97
... resistance - heated sources is shown in Fig . 7 . 2. Sublimation Sources A material sublimes if it has a very high vapor pressure below its melting point . Such materials therefore can be readily evaporated from resistance - heated ...
... resistance - heated sources is shown in Fig . 7 . 2. Sublimation Sources A material sublimes if it has a very high vapor pressure below its melting point . Such materials therefore can be readily evaporated from resistance - heated ...
Page 506
... resistance alkaline resistance In2O3-6 % SnO2 glass heat mirror Triple oxide Al2O3 - ZrO2 - SiO2 glass alkaline resistance for passivation of a surface [ 12 ] or improving surface perfection [ 13 ] . Titania is an example of an ...
... resistance alkaline resistance In2O3-6 % SnO2 glass heat mirror Triple oxide Al2O3 - ZrO2 - SiO2 glass alkaline resistance for passivation of a surface [ 12 ] or improving surface perfection [ 13 ] . Titania is an example of an ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength