Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 555
... resistivity is sensitive to the H2 / WF6 ratio in the ambient , with higher ratios yielding lower resistivities . This effect probably exists because the scavenging of F be- comes more effective at higher H concentrations and lowers the ...
... resistivity is sensitive to the H2 / WF6 ratio in the ambient , with higher ratios yielding lower resistivities . This effect probably exists because the scavenging of F be- comes more effective at higher H concentrations and lowers the ...
Page 556
... resistivity of as - deposited films de- creased with increasing deposition temperature , probably because the incorporation of unreacted chloride in the film decreased with increasing temperatures . The resistivity of these films ...
... resistivity of as - deposited films de- creased with increasing deposition temperature , probably because the incorporation of unreacted chloride in the film decreased with increasing temperatures . The resistivity of these films ...
Page 557
... resistivity upon annealing was attributed to outdiffusion of F and H , presumably present in the as - deposited films , and not to the crystallization of the films . The lowest resistivity obtained with these films , after annealing ...
... resistivity upon annealing was attributed to outdiffusion of F and H , presumably present in the as - deposited films , and not to the crystallization of the films . The lowest resistivity obtained with these films , after annealing ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength