Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 354
... Semiconductor International 7 ( 5 ) , 72 ( 1984 ) . 19. T. C. Bettes , Semiconductor International 5 ( 3 ) , 59 ( 1982 ) . 20. W. Kern and K. K. Schuegraf , in " Handbook of Thin - Film Deposition Processes and Techniques " ( K. K. ...
... Semiconductor International 7 ( 5 ) , 72 ( 1984 ) . 19. T. C. Bettes , Semiconductor International 5 ( 3 ) , 59 ( 1982 ) . 20. W. Kern and K. K. Schuegraf , in " Handbook of Thin - Film Deposition Processes and Techniques " ( K. K. ...
Page 370
... semiconductor processing have centered on the ability to decrease the physical dimensions of the electronic device struc- ture . While improved photolithographic , deposition , and etching tech- niques have reduced the lateral dimension ...
... semiconductor processing have centered on the ability to decrease the physical dimensions of the electronic device struc- ture . While improved photolithographic , deposition , and etching tech- niques have reduced the lateral dimension ...
Page 409
... semiconductors is chiefly used for achieving doping profiles that cannot be realized through the conven- tional semiconductor processes of diffusion and ion implantation . A greater advantage in device design can be achieved by the ...
... semiconductors is chiefly used for achieving doping profiles that cannot be realized through the conven- tional semiconductor processes of diffusion and ion implantation . A greater advantage in device design can be achieved by the ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength