Thin film processes IIThis sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Key Features * Provides an all-new sequel to the 1978 classic, Thin Film Processes * Introduces new topics, and several key topics presented in the original volume are updated * Emphasizes practical applications of major thin film deposition and etching processes * Helps readers find the appropriate technology for a particular application |
From inside the book
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Page 354
P. H. Singer, Semiconductor International 7(5), 72 (1984). 19. T. C. Bettes,
Semiconductor International 5(3), 59 (1982). 20. W. Kern and K. K. Schuegraf, in "
Handbook of Thin-Film Deposition Processes and Techniques" (K. K. Schuegraf,
ed.) ...
P. H. Singer, Semiconductor International 7(5), 72 (1984). 19. T. C. Bettes,
Semiconductor International 5(3), 59 (1982). 20. W. Kern and K. K. Schuegraf, in "
Handbook of Thin-Film Deposition Processes and Techniques" (K. K. Schuegraf,
ed.) ...
Page 371
This growth technique was used in the early development of many compound
semiconductor devices. Limited substrate areas and poor control over the growth
of very thin layers has limited the extension of LPE to the new, more aggressive ...
This growth technique was used in the early development of many compound
semiconductor devices. Limited substrate areas and poor control over the growth
of very thin layers has limited the extension of LPE to the new, more aggressive ...
Page 409
In general, the (100) surface of a compound semiconductor crystal is used.
Growth on this crystal surface can result in the smooth growth of the
semiconductor, with the epitaxial layer generally being free of morphological
defects [198].
In general, the (100) surface of a compound semiconductor crystal is used.
Growth on this crystal surface can result in the smooth growth of the
semiconductor, with the epitaxial layer generally being free of morphological
defects [198].
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactive reactor refractory metal region remote PECVD RHEED semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric structure substrate substrate temperature susceptor target techniques Technol thermal thickness thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength
Bibliographic information
| Title | Thin film processes II Volume 2 of Thin Film Processes, John L. Vossen |
| Authors | John L. Vossen, Werner Kern |
| Editors | John L. Vossen, Werner Kern |
| Edition | illustrated |
| Publisher | Academic Press, 1991 |
| Original from | the University of Michigan |
| Digitized | 20 Sep 2010 |
| ISBN | 0127282513, 9780127282510 |
| Length | 866 pages |
| Subjects | › › Technology & Engineering / Electronics / Semiconductors Technology & Engineering / Material Science Thin films |
| Export Citation | BiBTeX EndNote RefMan |