Thin Film Processes, Volume 2 |
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Page 354
P . H . Singer , Semiconductor International 7 ( 5 ) , 72 ( 1984 ) . 19 . T . C . Bettes
, Semiconductor International 5 ( 3 ) , 59 ( 1982 ) . 20 . W . Kern and K . K ... York ,
1986 . 23 . “ Dielectric Films on Compound Semiconductors ” ( V . J . Kapoor , D ...
P . H . Singer , Semiconductor International 7 ( 5 ) , 72 ( 1984 ) . 19 . T . C . Bettes
, Semiconductor International 5 ( 3 ) , 59 ( 1982 ) . 20 . W . Kern and K . K ... York ,
1986 . 23 . “ Dielectric Films on Compound Semiconductors ” ( V . J . Kapoor , D ...
Page 371
This growth technique was used in the early development of many compound
semiconductor devices . ... Vapor phase epitaxy ( VPE ) of compound
semiconductors utilizes the formation of volatile metal halides as transport agents
( 5 ) .
This growth technique was used in the early development of many compound
semiconductor devices . ... Vapor phase epitaxy ( VPE ) of compound
semiconductors utilizes the formation of volatile metal halides as transport agents
( 5 ) .
Page 409
In general , the ( 100 ) surface of a compound semiconductor crystal is used .
Growth on this crystal surface can result in the smooth growth of the
semiconductor , with the epitaxial layer generally being free of morphological
defects ( 198 ) .
In general , the ( 100 ) surface of a compound semiconductor crystal is used .
Growth on this crystal surface can result in the smooth growth of the
semiconductor , with the epitaxial layer generally being free of morphological
defects ( 198 ) .
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls