Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 492
John L. Vossen, Werner Kern. TABLE IV CHARACTERISTICS OF SILICON OXIDE AND SILICON NITRIDE FILMS Deposited BY PHOTO - CVD IN A COMMERCIAL Reactor ( after Ref . 35 ) Film Characteristic Silicon dioxide Silicon nitride Density 2.10 g / cm3 ...
John L. Vossen, Werner Kern. TABLE IV CHARACTERISTICS OF SILICON OXIDE AND SILICON NITRIDE FILMS Deposited BY PHOTO - CVD IN A COMMERCIAL Reactor ( after Ref . 35 ) Film Characteristic Silicon dioxide Silicon nitride Density 2.10 g / cm3 ...
Page 539
... Silicon Oxide PECVD silicon oxide films are used primarily as an interconductor dielectric material because of the low deposition temperature ( 200-300 ° C ) and their relatively low dielectric constant ( 4–6 , vs. 6–9 for PECVD silicon ...
... Silicon Oxide PECVD silicon oxide films are used primarily as an interconductor dielectric material because of the low deposition temperature ( 200-300 ° C ) and their relatively low dielectric constant ( 4–6 , vs. 6–9 for PECVD silicon ...
Page 558
... silicon nitride , silicate glasses , silicon oxide , and amorphous silicon , was discussed . The state of the art in the PECVD of polycrystalline silicon , epitaxial silicon , epitaxial gallium arse- nide , refractory metals ...
... silicon nitride , silicate glasses , silicon oxide , and amorphous silicon , was discussed . The state of the art in the PECVD of polycrystalline silicon , epitaxial silicon , epitaxial gallium arse- nide , refractory metals ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength