Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 494
... silicon nitride were carried out by Boyer et al . [ 137 ] . With the ArF laser beam parallel to the substrate , they ... nitride films by more than a factor of five . Obtaining stoichiometric silicon nitride ( Si3N4 ) is hindered by the ...
... silicon nitride were carried out by Boyer et al . [ 137 ] . With the ArF laser beam parallel to the substrate , they ... nitride films by more than a factor of five . Obtaining stoichiometric silicon nitride ( Si3N4 ) is hindered by the ...
Page 526
... silicon nitride and silicon oxide [ 2 ] . The major advantage of PEVCD is its lower temperature capability com- pared to that of thermally driven CVD . For example , deposition tempera- tures of 700 to 900 ° C are required to deposit ...
... silicon nitride and silicon oxide [ 2 ] . The major advantage of PEVCD is its lower temperature capability com- pared to that of thermally driven CVD . For example , deposition tempera- tures of 700 to 900 ° C are required to deposit ...
Page 605
... nitrides and one for a - Si . In this instance , the deposition rate for the silicon nitride material is smaller than the deposition rate for the amorphous silicon ma- terial because of the difficulty in creating atomic N species from ...
... nitrides and one for a - Si . In this instance , the deposition rate for the silicon nitride material is smaller than the deposition rate for the amorphous silicon ma- terial because of the difficulty in creating atomic N species from ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength