Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 502
... sol - gel thin films proved to be technically sound alternatives in some cases , they have also been shown to be commercially viable alternatives . The principles of sol - gel processing have been reviewed recently [ 1–3 ] , and the ...
... sol - gel thin films proved to be technically sound alternatives in some cases , they have also been shown to be commercially viable alternatives . The principles of sol - gel processing have been reviewed recently [ 1–3 ] , and the ...
Page 507
... gel that zirco- nium isopropoxide would be added to TEOS and the mixture would be left exposed to hydrolyze slowly by absorbing moisture from the atmo- sphere [ 26 ] . A formulation for 25 alumina - 25 zirconia ... SOL - GEL COATINGS 507.
... gel that zirco- nium isopropoxide would be added to TEOS and the mixture would be left exposed to hydrolyze slowly by absorbing moisture from the atmo- sphere [ 26 ] . A formulation for 25 alumina - 25 zirconia ... SOL - GEL COATINGS 507.
Page 513
... gel to a hard gel usually takes about 30 minutes . Films can be dried quickly in air because of their thin single dimension . Water and solvent escape through interconnected pores which remain open at the surface ... SOL - GEL COATINGS 513.
... gel to a hard gel usually takes about 30 minutes . Films can be dried quickly in air because of their thin single dimension . Water and solvent escape through interconnected pores which remain open at the surface ... SOL - GEL COATINGS 513.
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength