Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 507
... solution is considered peptized when it is ready for dip coating , where the titania and silica solutions are truly ... solution is stirred in a narrow - necked flask at room temperature and left in an open flask to hydrolyze slowly for ...
... solution is considered peptized when it is ready for dip coating , where the titania and silica solutions are truly ... solution is stirred in a narrow - necked flask at room temperature and left in an open flask to hydrolyze slowly for ...
Page 509
... Solutions Typically , solution viscosities are measured with a rotating cylinder . The viscosity is plotted as the log of the viscosity in centipoise vs. real time , or , in some cases , vs. reduced time , real time divided by time - to ...
... Solutions Typically , solution viscosities are measured with a rotating cylinder . The viscosity is plotted as the log of the viscosity in centipoise vs. real time , or , in some cases , vs. reduced time , real time divided by time - to ...
Page 512
... solution is dripped on the center of the substrate . In most cases , a film thickness between 50 and 500 nm will result . Controlling the thickness is a matter of controlling the solution viscosity . Typical solution viscosities are 3 ...
... solution is dripped on the center of the substrate . In most cases , a film thickness between 50 and 500 nm will result . Controlling the thickness is a matter of controlling the solution viscosity . Typical solution viscosities are 3 ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength