Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 177
John L. Vossen, Werner Kern. 11-4 Sputter Deposition Processes ROBERT PARSONS Department of Physics The University of British Columbia Vancouver , British Columbia Canada I. Introduction 177 A. General 177 B. Features of a Sputter Coater ...
John L. Vossen, Werner Kern. 11-4 Sputter Deposition Processes ROBERT PARSONS Department of Physics The University of British Columbia Vancouver , British Columbia Canada I. Introduction 177 A. General 177 B. Features of a Sputter Coater ...
Page 191
... sputtering involves bleeding suf- ficient reactive gas into the chamber to keep the target completely covered with dielectric . This " covered - mode " operation II - 4 . SPUTTER DEPOSITION PROCESSES 191 Sputter Deposition of Dielectric ...
... sputtering involves bleeding suf- ficient reactive gas into the chamber to keep the target completely covered with dielectric . This " covered - mode " operation II - 4 . SPUTTER DEPOSITION PROCESSES 191 Sputter Deposition of Dielectric ...
Page 199
... sputter discharge . Amorphous carbon films containing up to 35 at % of hydrogen were deposited by ion beam sputtering a carbon target in a hydrogen - argon gas mixture [ 157 , 158 ] . The magnetron ... SPUTTER DEPOSITION PROCESSES 199.
... sputter discharge . Amorphous carbon films containing up to 35 at % of hydrogen were deposited by ion beam sputtering a carbon target in a hydrogen - argon gas mixture [ 157 , 158 ] . The magnetron ... SPUTTER DEPOSITION PROCESSES 199.
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength