Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 24
... etching in a dc plasma . ( b ) Sample locations for deposition of sputtered cathode material in a dc plasma . For a ... sputter etching of samples placed on the cathode surface , or else for sputter deposition of cathode material onto ...
... etching in a dc plasma . ( b ) Sample locations for deposition of sputtered cathode material in a dc plasma . For a ... sputter etching of samples placed on the cathode surface , or else for sputter deposition of cathode material onto ...
Page 679
... sputter- ing , CVD , etc. ) over the mask . In a final step , all the ... etching step has to be highly directional or anisotropic . Wet chemical etching usually leads ... etching Anisotropic etching b ) V - 1 . PLASMA - ASSISTED ETCHING 679.
... sputter- ing , CVD , etc. ) over the mask . In a final step , all the ... etching step has to be highly directional or anisotropic . Wet chemical etching usually leads ... etching Anisotropic etching b ) V - 1 . PLASMA - ASSISTED ETCHING 679.
Page 732
... etching . If the plasma comes in contact with materials that do not form volatile products with the etch gas ( e.g. ... sputter etching . When an involatile species arrives at and condenses on a surface that is rapidly etching forming ...
... etching . If the plasma comes in contact with materials that do not form volatile products with the etch gas ( e.g. ... sputter etching . When an involatile species arrives at and condenses on a surface that is rapidly etching forming ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength