Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 178
... sputtering [ 1 ] , discharge sputtering [ 2 ] , magnetron sputtering [ 3 , 4 ] , and reactive sputtering [ 5 , 6 ] . Sputtering involves many interrelated physical and chemical processes . Although our basic understanding of this ...
... sputtering [ 1 ] , discharge sputtering [ 2 ] , magnetron sputtering [ 3 , 4 ] , and reactive sputtering [ 5 , 6 ] . Sputtering involves many interrelated physical and chemical processes . Although our basic understanding of this ...
Page 188
... sputtering . Detailed descriptions of the Kaufman source , together with other types of sources ( e.g. , duplasmatron ) and ion beam sputtering techniques , are found in the literature [ 7 ] . The unique features of ion beam sputtering ...
... sputtering . Detailed descriptions of the Kaufman source , together with other types of sources ( e.g. , duplasmatron ) and ion beam sputtering techniques , are found in the literature [ 7 ] . The unique features of ion beam sputtering ...
Page 199
... sputtering chamber by flowing argon gas . e . Amorphous Silicon a - Si : H films have been reactively sputtered with a planar magnetron [ 156 ] . The hydrogen content of the films was controlled by adjusting the hydrogen partial ...
... sputtering chamber by flowing argon gas . e . Amorphous Silicon a - Si : H films have been reactively sputtered with a planar magnetron [ 156 ] . The hydrogen content of the films was controlled by adjusting the hydrogen partial ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength