Thin Film Processes, Volume 2 |
From inside the book
Results 1-3 of 82
Page 178
the basic underlying physics of sputtering , the reader is referred to Chapter II . 1
and the excellent review articles on cathode sputtering ( 1 ) , discharge sputtering
[ 2 ] , magnetron sputtering [ 3 , 4 ] , and reactive sputtering ( 5 , 6 ] . Sputtering ...
the basic underlying physics of sputtering , the reader is referred to Chapter II . 1
and the excellent review articles on cathode sputtering ( 1 ) , discharge sputtering
[ 2 ] , magnetron sputtering [ 3 , 4 ] , and reactive sputtering ( 5 , 6 ] . Sputtering ...
Page 199
Recent results involving metallorganic magnetron sputtering ( MOMS ) have
shown that InSb films can be produced with good compositional uniformity and
surface morphology by reactively sputtering an antimony metal target in a
reactive ...
Recent results involving metallorganic magnetron sputtering ( MOMS ) have
shown that InSb films can be produced with good compositional uniformity and
surface morphology by reactively sputtering an antimony metal target in a
reactive ...
Page 762
bation on ded is lesailable for B . Reactive Sputtering Some survey publications
are available for reactive sputtering ( 16 , 17 ] , but the information included is
less systematic and organized than the preceding information on physical
sputtering ...
bation on ded is lesailable for B . Reactive Sputtering Some survey publications
are available for reactive sputtering ( 16 , 17 ] , but the information included is
less systematic and organized than the preceding information on physical
sputtering ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
20 other sections not shown
Other editions - View all
Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls