Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 18
Page 49
... sputtering ( yield / ion energy ) as a function of ion energy . for these devices by collecting deposited films on ... sputtering Al with Ar , the backscattering or redeposition of the sputtered atoms back onto the cathode surface can ...
... sputtering ( yield / ion energy ) as a function of ion energy . for these devices by collecting deposited films on ... sputtering Al with Ar , the backscattering or redeposition of the sputtered atoms back onto the cathode surface can ...
Page 193
... rate ) sputtering , the reactive gas flow is operated in the range from F1 + to F2 + . Under these operating conditions , a high deposition rate corresponding to the sputter yield for the metal surface is achieved , while nearly ...
... rate ) sputtering , the reactive gas flow is operated in the range from F1 + to F2 + . Under these operating conditions , a high deposition rate corresponding to the sputter yield for the metal surface is achieved , while nearly ...
Page 761
... yield ( from Ref . 15 ) is indicated in Fig . 2. The etch rate is proportional to sputter yield , so that the ... sputtering . ( a ) Sputter yield . ( b ) Energy - specific B. Reactive Sputtering Some survey publications are available ...
... yield ( from Ref . 15 ) is indicated in Fig . 2. The etch rate is proportional to sputter yield , so that the ... sputtering . ( a ) Sputter yield . ( b ) Energy - specific B. Reactive Sputtering Some survey publications are available ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength