Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 189
... starting alloy material . A dopant , such as nitrogen , can be introduced into the metal film during growth by using reactive sputtering techniques ( Section IV , A ) . Any type of sputter source , either dc or rf , can be used to ...
... starting alloy material . A dopant , such as nitrogen , can be introduced into the metal film during growth by using reactive sputtering techniques ( Section IV , A ) . Any type of sputter source , either dc or rf , can be used to ...
Page 304
... starting with LPCVD processes . a . LPCVD Reactors Since multiple - wafer tubular low - pressure vertical and horizontal reac- tors are operated at low pressures under nearly isothermal conditions , multicomponent diffusion and surface ...
... starting with LPCVD processes . a . LPCVD Reactors Since multiple - wafer tubular low - pressure vertical and horizontal reac- tors are operated at low pressures under nearly isothermal conditions , multicomponent diffusion and surface ...
Page 331
... starting with the elemental semiconduc- tors , diamond and Si . Ge is primarily of interest for Si / Ge heterostructures and will be discussed in conjunction with deposition of epitaxial Si . B. CVD of Elemental Semiconductors 1. CVD of ...
... starting with the elemental semiconduc- tors , diamond and Si . Ge is primarily of interest for Si / Ge heterostructures and will be discussed in conjunction with deposition of epitaxial Si . B. CVD of Elemental Semiconductors 1. CVD of ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength